Search results for "Flash memories"

showing 3 items of 3 documents

Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

2012

Threshold voltage (V-th) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (gamma-and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to V-th variation and that the V-th loss and the variability can be modeled by a Weibull statistics with a shape parameter k similar to 2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the V-th loss distributio…

Materials sciencePhotonbusiness.industryoxide-nitride-oxide (ONO)radiation hardnessFlash memoriesShape parameterElectronic Optical and Magnetic MaterialsThreshold voltageIonizing radiationNon-volatile memoryFlash memories nitride read-only memories (NROMs) oxide–nitride–oxide (ONO) radiation hardness.nitride read-only memories (NROMs)OptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardeningWeibull distribution
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Ionizing radiation effects on Non Volatile Read Only Memory cells

2012

Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.

Nuclear and High Energy PhysicsPhotonMaterials sciencebusiness.industrynitride read-only memories (NROM)Nitrideradiation hardnessFlash memoriesFlash memoryIonizing radiationThreshold voltageIonoxide/nitride/oxide (ONO)Terms—Flash memories nitride read-only memories (NROM) oxide/nitride/oxide (ONO) radiation hardness.Nuclear Energy and EngineeringOptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardening
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Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

2017

Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size. peerReviewed

protonitNuclear and High Energy PhysicsProtonfloating gate devicesNAND gateFlash memories01 natural sciencesComputer Science::Hardware ArchitectureIonizationFlash memories; floating gate devices; protons; single event effects; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic Engineering0103 physical sciencesHardware_ARITHMETICANDLOGICSTRUCTURESElectrical and Electronic Engineeringflash-muistit010302 applied physicsPhysicsRange (particle radiation)ta114ta213protons010308 nuclear & particles physicsbusiness.industryElectrical engineeringsingle event effectsNon-volatile memoryNuclear Energy and EngineeringLogic gateAtomic physicsbusinessEvent (particle physics)Energy (signal processing)IEEE Transactions on Nuclear Science
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